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Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

机译:控制生长速率各向异性以从种子衬底形成连续的ZnO薄膜

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摘要

Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90°C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl-) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl - ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl- to dominate. By optimizing the growth conditions, a dense ~100 nm thickness film was fabricated in 15 min from a solution of [Cl-]/[Zn2+] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm2 V~(-1) s~(-1) at zero back-gate bias.
机译:溶液处理的氧化锌(ZnO)薄膜有望成为透明薄膜电子产品中可低温处理的有源层的候选材料。在这项研究中,使用ZnO纳米粒子种子,加盖离子和调节pH来控制生长速率各向异性导致了透明(高密度)ZnO薄膜的低温(90°C)水热工艺。使用短时纯溶液法将常见的1D ZnO纳米棒阵列生长为2D连续多晶膜。通过改变氯化锌(Cl-)离子浓度和硝酸锌和六亚甲基四胺(HMTA)溶液的初始pH值,以及Cl-和HMTA配体对氯离子的竞争吸附作用,可以调节ZnO晶体的生长速率各向异性和薄膜形貌。提出了ZnO晶体的各向异性生长行为。通过降低溶液的pH值以促进HMTA的水解,促进了构成膜的纳米棒的横向生长,从而使Cl-的吸附作用占主导。通过优化生长条件,在15分钟内由[Cl-] / [Zn2 +] = 1.5和pH = 4.8±0.1的溶液制备了致密的〜100 nm厚度的膜。该膜在零背栅偏压下显示出> 80%的透光率和2.730 cm2 V〜(-1)s〜(-1)的场效应迁移率。

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