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首页> 外文期刊>Nanotechnology >Unambiguous identification of recombination lines in single zinc-blende ZnSe nanowires in direct relation to their microstructure
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Unambiguous identification of recombination lines in single zinc-blende ZnSe nanowires in direct relation to their microstructure

机译：直接确定锌单条ZnSe纳米线中重组线与其微观结构的直接关系

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摘要

We present results on the low-temperature photoluminescence characterization of individual ZnSe nanowires, whose crystal structure was determined to be zinc-blende by transmission electron microscopy on the same individual nanowires as were studied optically. The photoluminescence response from single ZnSe nanowires was found to be dominated by excitonic emission due to native point defects, while no emission peaks related to the unintentional impurities were detected. Two strong photoluminescence lines were observed at 2.785 eV and 2.780 eV, assigned to the excitons bound to deep neutral acceptors related to the vacancies of Zn (V_(Zn)) and complexes of V_(Zn), respectively. Another recombination peak at 2.800 eV related to the free exciton emission in ZnSe was also observed. Longitudinal optical-phonon replicas of up to three orders were seen for both lines, and the average number of emitted phonons was also determined. The excitonic emission linewidths of 1.5 meV were observed from individual nanowires, which are the narrowest excitonic linewidths reported so far for ZnSe nanowires. The optical response from a single nanowire was also compared to that from a bundle of nanowires, and it was found that the linewidths of excitonic emission from the bundle of nanowires were slightly larger than those from single nanowires, due to the effects of ensemble broadening. It is also suggested that in the case of a bundle of nanowires, the broadening is limited by the nanowire which exhibits the largest excitonic linewidth.
机译：我们提供了关于单个ZnSe纳米线的低温光致发光特性的结果，该纳米线的晶体结构通过透射电子显微镜在光学上研究的同一单个纳米线上被确定为闪锌矿型。由于自然点缺陷，发现单根ZnSe纳米线的光致发光响应受激子发射支配，而未检测到与意外杂质相关的发射峰。在2.785 eV和2.780 eV处观察到两条强光致发光线，分别分配给与深空中性受体相关的激子，该中性受体与Zn（V_（Zn））和V_（Zn）的络合物有关。还观察到在2.800 eV处的另一个重组峰，与ZnSe中的自由激子发射有关。两条线都可以看到多达三个阶的纵向光学声子副本，并且还确定了发射声子的平均数量。从单个纳米线观察到1.5meV的激子发射线宽，这是迄今为止报道的ZnSe纳米线的最窄的激子线宽。还将单根纳米线的光响应与一束纳米线的光响应进行了比较，发现由于合束加宽的影响，该束纳米线的激子发射的线宽比单根纳米线的激子发射的线宽稍大。还建议在纳米线束的情况下，展宽受到表现出最大激子线宽的纳米线的限制。

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