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首页> 外文期刊>Nanotechnology >Floating electrode transistor based on purified semiconducting carbon nanotubes for high source-drain voltage operation
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Floating electrode transistor based on purified semiconducting carbon nanotubes for high source-drain voltage operation

机译：基于纯化的半导体碳纳米管的浮置电极晶体管，用于高源漏电压操作

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摘要

We report floating-electrode-based thin-film transistors (F-TFTs) based on a purified semiconducting single-walled carbon nanotube (swCNT) network for a high sourcedrain voltage operation. At a high sourcedrain voltage, a conventional swCNT-TFT exhibited poor transistor performance with a small onoff ratio, which was attributed to the reduced Schottky barrier modulation at a large bias. In the F-TFT device, an swCNT network channel was separated into a number of channels connected by floating electrodes. The F-TFTs exhibited a much higher onoff ratio than a conventional swCNT-TFT with a single channel. This work should provide an important guideline in designing swCNT-TFTs for high voltage applications such as displays.
机译：我们报告了基于浮式电极的薄膜晶体管（F-TFT），该晶体管基于用于高源漏电压操作的纯化的半导体单壁碳纳米管（swCNT）网络。在高的源漏电压下，常规的swCNT-TFT的晶体管性能较差，而其导通/截止比却很小，这归因于在大偏置下肖特基势垒调制降低。在F-TFT器件中，swCNT网络通道被分成多个通过浮动电极连接的通道。与具有单通道的常规swCNT-TFT相比，F-TFT的开关率高得多。这项工作应为设计用于显示器等高压应用的swCNT-TFT提供重要指导。

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