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Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si

机译：高硼掺杂纳米晶硅中电导率和塞贝克系数的同时增加

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摘要

A large thermoelectric power factor in heavily boron-doped p-type nanograined Si with grain sizes ～30 nm and grain boundary regions of ～2 nm is reported. The reported power factor is ～5 times higher than in bulk Si. It originates from the surprising observation that for a specific range of carrier concentrations, the electrical conductivity and Seebeck coefficient increase simultaneously. The two essential ingredients for this observation are nanocrystallinity and extremely high boron doping levels. This experimental finding is interpreted within a theoretical model that considers both electron and phonon transport within the semiclassical Boltzmann approach. It is shown that transport takes place through two phases so that high conductivity is achieved in the grains, and high Seebeck coefficient by the grain boundaries. This together with the drastic reduction in the thermal conductivity due to boundary scattering could lead to a significant increase of the figure of merit ZT. This is one of the rare observations of a simultaneous increase in the electrical conductivity and Seebeck coefficient, resulting in enhanced thermoelectric power factor.
机译：据报道，在重掺杂硼的p型纳米晶Si中，晶粒尺寸约为30 nm，晶界区域约为2 nm，具有较大的热电功率因数。报告的功率因数比块状Si高约5倍。它源自令人惊讶的观察结果，即对于特定范围的载流子浓度，电导率和塞贝克系数同时增加。该观察的两个基本成分是纳米结晶度和极高的硼掺杂水平。这个实验结果在一个理论模型中得到解释，该模型同时考虑了半经典玻耳兹曼方法中的电子和声子传输。结果表明，迁移发生在两个阶段，因此在晶粒中实现了高电导率，在晶粒边界处实现了高塞贝克系数。由于边界散射，这与热导率的急剧降低一起可能导致品质因数ZT的显着提高。这是电导率和塞贝克系数同时增加，导致热电功率因数提高的罕见发现之一。

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