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首页> 外文期刊>Nanotechnology >Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): From ultraviolet to infrared emission
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Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): From ultraviolet to infrared emission

机译：通过分子束外延在GaN缓冲的Si（111）上进行In（Ga）N / GaN纳米柱的选择性区域生长：从紫外到红外发射

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摘要

Selective area growth of In(Ga)N/GaN nanocolumns was performed on GaN-buffered Si(111) substrates by plasma-assisted molecular beam epitaxy. Undoped and Si-doped GaN buffer layers were first grown on Si(111) substrates, showing photoluminescence excitonic emission without traces of other low energy contributions, in particular, the yellow band. The GaN buffer surface roughness (between 10 and 14 nm, the rms value in a 10 × 10 μm~2 area) was low enough to allow the fabrication of a thin (7 nm thick) well defined Ti nanohole mask, for the selective area growth. Ordered In(Ga)N/GaN nanocolumns emitting from the ultraviolet (3.2 eV) to the infrared (0.78 eV) were obtained. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting at a given wavelength could be substantially improved by tuning the In/Ga and total III/N ratios. An estimated internal quantum efficiency of 36% was derived from photoluminescence data for green emitting nanocolumns.
机译：In（Ga）N / GaN纳米柱的选择性区域生长是通过等离子辅助分子束外延在GaN缓冲的Si（111）衬底上进行的。首先在Si（111）衬底上生长未掺杂和Si掺杂的GaN缓冲层，显示出光致发光激子发射，没有其他低能量贡献（特别是黄带）的痕迹。 GaN缓冲层的表面粗糙度（10至14 nm之间，均方根值在10×10μm〜2范围内）足够低，可以制造用于选择区域的薄（7 nm厚）定义明确的Ti纳米孔掩模增长。获得了从紫外线（3.2 eV）发射到红外线（0.78 eV）的有序In（Ga）N / GaN纳米柱。通过调节In / Ga和总III / N比，可以显着改善以给定波长发射的In（Ga）N / GaN纳米柱的形貌和发射效率。从绿色发光纳米柱的光致发光数据得出的内部量子效率估计为36％。

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