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首页> 外文期刊>Nanotechnology >Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography
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Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography

机译：接近非晶的Mo-N光栅，可在极紫外干扰光刻中实现极高的分辨率

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摘要

We present fabrication and characterization of high-resolution and nearly amorphous Mo_(1 - x)N_x transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N_2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo_(0.8)N_(0.2) grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo_(0.8)N_(0.2) thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.
机译：我们介绍了高分辨率和近乎无定形的Mo_（1-x）N_x透射光栅的制造和表征，以及它们作为极紫外（EUV）干涉光刻的掩模的用途。在Mo的溅射沉积过程中，通过向Ar溅射气体中添加N_2，将氮掺入薄膜中，从而抑制了Mo晶粒的生长，并形成了晶粒尺寸可忽略的光滑均匀的薄膜。通过X射线光电子能谱法测定，所获得的Mo0.8N0.2薄膜的特征在于，使用X射线衍射法几乎为非晶态。我们证明了与纯Mo光栅结构相比，电子束光刻和等离子干法刻蚀后，Mo_（0.8）N_（0.2）光栅线边缘粗糙度大大降低。非晶态的Mo_（0.8）N_（0.2）薄膜在很大程度上保留了Mo作为EUV波长的相位光栅材料的优势，为制造粗糙度极低的高效衍射光栅提供了极大的优势。使用这些光栅掩模，利用EUV干涉光刻技术可以制造出分辨率低至8 nm半间距的密集线。

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