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Field stitching in thermal probe lithography by means of surface roughness correlation

机译:通过表面粗糙度相关性在热探针光刻中进行场拼接

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摘要

A novel stitching method is presented which does not require special purpose alignment markers and which is particularly adapted to probe lithographic methods, enabling the writing of large patterns exceeding the size limitations imposed by high precision scan stages. The technique exploits the natural roughness of polymeric resist surfaces as a fingerprint marker for the sample position. Theoretical and experimental evidence is provided that sub-nanometer metrological accuracy can be achieved by inspecting the surface roughness in areas with 1μm linear dimensions. The method has been put to the test in a thermal probe lithography experiment by writing a composite pattern consisting of five 10μm ×10μm fields which are seamlessly joined together. The observed stitching error of 10nm between fields is dominated by inaccuracies of the scanning hardware used in the experiment and is not fundamentally limited by the method perse.
机译:提出了一种新颖的缝合方法,该方法不需要专用的对准标记,并且特别适合于探测光刻方法,从而能够写入超出由高精度扫描台施加的尺寸限制的大图案。该技术利用聚合物抗蚀剂表面的自然粗糙度作为样品位置的指纹标记。理论和实验证据表明,通过检查线性尺寸为1μm的区域的表面粗糙度,可以达到亚纳米计量精度。通过编写由五个无缝连接在一起的10μm×10μm场组成的复合图案,该方法已在热探针光刻实验中进行了测试。所观察到的场之间的10nm拼接误差主要由实验中使用的扫描硬件的误差决定,并且不受方法本身的根本限制。

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