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首页> 外文期刊>Nanotechnology >Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence
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Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence

机译：通过纳米阴极发光探测单根AlGaN纳米线中的合金成分梯度和纳米级载流子定位

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摘要

The optical properties of single AlGaN nanowires grown by plasma-assisted molecular beam epitaxy have been studied by nanocathodoluminescence. Optical emission was found to be position-dependent and to occur in a wide wavelength range, a feature which has been assigned to a composition gradient along the nanowire growth axis, superimposed on local composition fluctuations at the nanometer scale. This behavior is associated with the growth mode of such AlGaN nanowires, which is governed by kinetics, leading to the successive formation of (i) a zone with strong local composition fluctuations followed by (ii) a zone with a marked composition gradient and, eventually, (iii) a zone corresponding to a steady state regime and the formation of a homogeneous alloy.
机译：通过纳米阴极发光研究了通过等离子体辅助分子束外延生长的单根AlGaN纳米线的光学特性。发现光发射是位置依赖性的，并且发生在很宽的波长范围内，该特征已被分配给沿着纳米线生长轴的组成梯度，并叠加在纳米尺度上的局部组成波动上。此行为与此类AlGaN纳米线的生长模式有关，该生长模式受动力学控制，从而导致依次形成（i）具有强烈局部组成波动的区域，然后是（ii）具有明显组成梯度的区域，最终（iii）对应于稳态状态和均质合金形成的区域。

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