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Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching

机译：结合生物模板技术和中性束刻蚀制造的GaAs纳米盘中的量子尺寸效应

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摘要

We successfully fabricated defect-free, distributed and sub-20-nm GaAs quantum dots (named GaAs nanodisks (NDs)) by using a novel top-down technique that combines a new bio-template (PEGylated ferritin) and defect-free neutral beam etching (NBE). Greater flexibility was achieved when engineering the quantum levels of ND structures resulted in greater flexibility than that for a conventional quantum dot structure because structures enabled independent control of thickness and diameter parameters. The ND height was controlled by adjusting the deposition thickness, while the ND diameter was controlled by adjusting the hydrogen-radical treatment conditions prior to NBE. Photoluminescence emission due to carrier recombination between the ground states of GaAs NDs was observed, which showed that the emission energy shift depended on the ND diameters. Quantum level engineering due to both diameter and thickness was verified from the good agreement between the PL emission energy and the calculated quantum confinement energy.
机译：通过使用结合了新的生物模板（聚乙二醇化铁蛋白）和无缺陷中性束的新型自上而下的技术，我们成功地制造了无缺陷，分布且小于20 nm的GaAs量子点（称为GaAs纳米盘（NDs））蚀刻（NBE）。当设计ND结构的量子能级时，与传统的量子点结构相比，它具有更大的灵活性，因为结构使厚度和直径参数能够独立控制。通过调节沉积厚度来控制ND高度，而通过在NBE之前通过调节氢自由基处理条件来控制ND直径。观察到由于GaAs NDs的基态之间的载流子复合导致的光致发光，这表明发射能量的变化取决于ND的直径。通过PL发射能量与计算出的量子约束能量之间的良好一致性，验证了由于直径和厚度而引起的量子级工程。

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