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首页> 外文期刊>Nanotechnology >GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE
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GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE

机译：使用选择性区域MOVPE在多晶硅薄膜上生长GaAs纳米线

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摘要

The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.
机译：研究了使用选择性区域金属有机气相外延法在多晶硅（poly-Si）薄膜上生长的GaAs纳米线（NWs）的生长机理。在多晶硅衬底上的掩模开口中选择性地生长线结构。线结构的出现率很大程度上取决于多晶硅衬底的生长条件和沉积温度。对生长形状和生长特性的评估表明，在多晶硅衬底上生长的GaAs NW具有与在单晶GaAs或Si衬底上生长的常规GaAs NW相同的生长机理。实验表明，可通过增加Si晶粒尺寸和/或提高Si沉积温度来提高线结构的成品率。为理解多晶硅上的NW生长而提出的生长模型是基于掩模开口尺寸，Si晶粒尺寸和生长条件的。控制生长模式的能力有望在多晶硅薄层上形成具有复杂结构的NW。

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