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Coupling of photomechanical and electromechanical actuations in carbon nanotubes

机译:碳纳米管中光机电驱动的耦合

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It is known that carbon nanotubes (CNTs) possess multifunctional characteristics, which are applicable for a wide variety of engineering applications. CNT is also recognized as a radiation sensitive material, for example for detecting infrared (IR) radiations. One of the direct implications of exposing CNTs to radiation is the photomechanical actuation and generation of a photovoltage/photocurrent. The present work focuses on coupling electromechanical and photomechanical characteristics to enhance the resulting induced-strain response in CNTs. We have demonstrated that after applying an electric field the induced strain in CNT sheet is enhanced to about ~2.18 times for the maximum applied electric field at 2 V as compared to the photo-actuation response alone. This enhancement of the strain at higher bias voltages (>1 V) can be considered as a sum of individual contributions of the bias voltage and IR stimulus. However, at lower voltage (<1 V) the enhancement in the resulting strain has been attributed to the associated electrostatic effects when CNTs are stimulated with IR radiation under external bias conditions. This report reveals that voltage bias or IR stimulus alone could not produce the observed strain in the CNT sheet under lower bias conditions.
机译:已知碳纳米管(CNT)具有多功能特性,可应用于多种工程应用。 CNT也被认为是辐射敏感材料,例如用于检测红外(IR)辐射。将CNT暴露于辐射的直接影响之一是光机械致动和光电压/光电流的产生。本工作着重于耦合机电和光机械特性,以增强碳纳米管中所产生的感应应变响应。我们已经证明,在施加电场之后,与单独的光激励响应相比,在2 V时施加的最大电场将使CNT片材中的感应应变提高到约2.18倍。在较高的偏置电压(> 1 V)下应变的这种增强可以认为是偏置电压和IR刺激的各个贡献之和。但是,在较低的电压(<1 V)下,当在外部偏压条件下用IR辐射刺激CNT时,所产生的应变增强归因于相关的静电效应。该报告表明,在较低的偏压条件下,仅电压偏压或IR刺激无法在CNT板中产生观察到的应变。

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