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首页> 外文期刊>Nanotechnology >Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography
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Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography

机译：通过适用于纳米光刻的氧化钛/碳纳米管异质结构实现的可变电子束直径

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摘要

We report the fabrication of a titanium oxide/carbon nanotube based field emission device suitable for nanolithography and fabrication of transistors. The growth of carbon nanotubes (CNTs) is performed on silicon substrates using a plasma-enhanced chemical vapor deposition method. The vertically grown CNTs are encapsulated by titanium oxide (TiO_2) using an atmospheric pressure chemical vapor deposition system. Field emission from the CNTs is realized by mechanical polishing of the prepared structure. Possible applications of such nanostructures as a lithography tool with variable electron beam diameter has been investigated. The obtained results show that a spot size of less than 30 nm can be obtained by applying the proper voltage on TiO_2 surrounding gate. Electrical measurements of the fabricated device confirm the capability of the structure for fabrication of field emission based field effect transistors. By a voltage applied between the gate and the cathode electrode, the emission current from CNTs shows a significant drop, indicating proper control of the gate on the emission current.
机译：我们报告了适用于纳米光刻和晶体管制造的基于氧化钛/碳纳米管的场致发射器件的制造。碳纳米管（CNT）的生长是使用​​等离子增强化学气相沉积法在硅基板上进行的。使用大气压化学气相沉积系统将垂直生长的CNT用氧化钛（TiO_2）封装。通过对所制备的结构进行机械抛光，可以实现来自CNT的场发射。已经研究了这种纳米结构作为具有可变电子束直径的光刻工具的可能应用。获得的结果表明，通过在栅周围的TiO_2上施加适当的电压，可以获得小于30 nm的光斑尺寸。所制造的器件的电学测量证实了用于制造基于场发射的场效应晶体管的结构的能力。通过在栅极和阴极之间施加电压，来自CNT的发射电流显示出明显的下降，表明对发射电流的栅极进行了适当的控制。

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