• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Enhancement of the effectiveness of graphene as a transparent conductive electrode by AgNO_3 doping
【24h】

Enhancement of the effectiveness of graphene as a transparent conductive electrode by AgNO_3 doping

机译：AgNO_3掺杂增强石墨烯作为透明导电电极的有效性

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Singlelayer graphene sheets have been synthesized by using chemical vapor deposition, and subsequently doped with AgNO_3 at various doping concentrations (n_D) from 5 to 50 mM. Atomic force microscopy and field emission scanning electron microscopy images reveal the formation of ~10–100 nm Ag particles on the graphene surface after doping. The type of n doping is confirmed by analyzing the n_D-dependent behaviors of Raman scattering and the work function of the doped graphene films. The sheet resistance monotonically decreases to ~173 Ω=sq with the increase of n_D to 50 mM, and the transmittance is reduced by only about 3% for the highest nD. At n_D =10 mM optimized doped graphene layers with a sheet resistance of 202Ω=sq and a transmittance of 96% are obtained, resulting in a maximum DC conductivity/optical conductivity ratio (σ_(DC)/σ_(OP)) of ~45:5, much larger than the minimum industry standard (σ_(DC)/σ_(OP) =~35) for transparent conductive electrodes.
机译：已经通过使用化学气相沉积法合成了单层石墨烯片，随后以5至50 mM的各种掺杂浓度（n_D）掺杂了AgNO_3。原子力显微镜和场发射扫描电子显微镜图像显示出掺杂后在石墨烯表面形成了约10-100 nm的银颗粒。通过分析拉曼散射的n_D依赖行为和掺杂的石墨烯薄膜的功函数，可以确定n掺杂的类型。随着n_D增加到50 mM，薄层电阻单调减少至〜173Ω= sq，对于最高nD，透射率仅降低约3％。在n_D = 10 mM时，获得了具有202Ω= sq的薄层电阻和96％的透光率的优化掺杂石墨烯层，从而导致最大直流电导率/光电导率比（σ_（DC）/σ_（OP））为〜 45：5，比透明导电电极的最低行业标准（σ_（DC）/σ_（OP）=〜35）大得多。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号