• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices
【24h】

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

机译：晶圆级自组织的InP纳米柱，其取向受控，用于光伏设备

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.
机译：展示了一种用于生成InP纳米柱的独特晶圆级自组织过程，该工艺基于InP的无掩模离子束蚀刻（IBE）技术开发而成，用于获得纳米柱，其中纳米柱的高度，形状和方向可以达到通过控制加工参数来改变。制成的InP纳米柱表现出对反射率的宽带抑制，即“黑色InP”，这对太阳能电池有用。在制造的太阳能电池中，用于载流子收集的共形p-n结的实现是通过在制造的柱上进行金属有机气相外延（MOVPE）过度生长步骤实现的。共形的过度生长保留了InP纳米柱的宽带抗反射特性，表明该技术在太阳能电池中的可行性。使用硫-油胺溶液对形成的InP纳米柱进行表面钝化可改善太阳能电池的特性。与未钝化的器件相比，实现了0.71 V的开路电压和0.13 V的增加。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号