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Temperature-dependent thermal conductivities of 1D semiconducting nanowires via four-point-probe 3-ω method

机译：一维半导体纳米线的四点探针3-ω方法随温度变化的导热系数

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摘要

We report on a systematic study of the thermal transport characteristics of both as-grown zinc oxide and gallium nitride nanowires (NWs) via the four-point-probe 3-ω method in the temperature range 130-300 K. Both as-grown NWs were synthesized by a vapor-liquid-solid growth mechanism, and show clear n-type semiconducting behavior without any defects, which enables both the NWs to be promising candidates for thermoelectric materials. To measure the thermal conductivities of both NWs with lower heat loss and measurement errors, the suspended structures were formed by a combination of an e-beam lithography process and a random dispersion method. The measured thermal conductivities of both NWs are greatly reduced compared to their bulk materials due to the enhanced phonon scattering via the size effect and dopants (impurities). Furthermore, we observed that the Umklapp peaks of both NWs are shifted to a higher temperature than those of their bulk counterparts, indicating that phonon-boundary scattering dominates over other phonon scattering due to the size effect.
机译：我们通过四点探针3-ω方法在130-300 K的温度范围内对已生长的氧化锌和氮化镓纳米线（NWs）的热传输特性进行了系统研究。通过汽-液-固生长机理合成了NW，并显示出清晰的n型半导体行为而没有任何缺陷，这使得两种NW都有望成为热电材料的候选材料。为了以较低的热损失和测量误差来测量两种NW的热导率，通过结合电子束光刻工艺和随机分散法形成了悬浮结构。与之相比，由于体积效应和掺杂剂（杂质）的声子散射增强，两个NW的实测热导率与其散装材料相比大大降低。此外，我们观察到两个NW的Umklapp峰都移到了比其本体峰更高的温度，这表明由于尺寸效应，声子边界散射比其他声子散射占主导地位。

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