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Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

机译：过度生长动力学引起的紧密堆积三层InAs / GaAs量子点极化灵敏度的调谐

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摘要

Tailoring of electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how fine control of the strain-induced surface kinetics during the growth of vertically stacked multiple layers of QDs allows for the engineering of their self-organization process. Most noticeably, this study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with a GaAs spacer. This leads to a drastic increase of the TM/TE polarization ratio of emitted light, not accessible from conventional growth parameters. Our detailed experimental measurements, supported by comprehensive multi-million atom simulations of strain, electronic and optical properties, provide in-depth analysis of the grown QD samples allowing us to give a clear picture of the atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response.
机译：定制自组装InAs量子点（QD）的电子和光学特性是设计在电信频率范围内运行的几种基于QD的光电设备的关键限制。我们描述了在垂直堆叠的多层QD的生长过程中如何对应变诱导的表面动力学进行精细控制，以实现其自组织过程的工程化。最引人注目的是，这项研究表明，沿着量子点堆叠诱发的潜在应变场可以通过用GaAs间隔物封盖后发生的时间相关的混合和偏析效应进行调制和控制。这导致发射光的TM / TE偏振比急剧增加，这是常规生长参数无法达到的。我们详尽的实验测量得到数百万个应变，电学和光学性质的原子模拟的全面支持，可对生长的量子点样品进行深入分析，从而使我们能够清晰地了解影响拟议的生长动力学及其结果的原子尺度现象。 QD极化响应。

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