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Low-voltage-exposure-enabled hydrogen silsesquioxane bilayer-like process for three-dimensional nanofabrication

机译：低压曝光使氢倍半硅氧烷双分子层状工艺用于三维纳米加工

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摘要

We report a bilayer-like electron-beam lithographic process to obtain three-dimensional (3D) nanostructures by using only a single hydrogen silsesquioxane (HSQ) resist layer. The process utilizes the short penetration depth of low-energy (1.5 keV) electron irradiation to first obtain a partially cross-linked HSQ top layer and then uses a high-voltage electron beam (30 keV) to obtain self-aligned undercut (e.g. mushroom-shaped) and freestanding HSQ nanostructures. Based on the well-defined 3D resist patterns, 3D metallic nanostructures were directly fabricated with high fidelity by just depositing a metallic layer. As an example, Ag-coated mushroom-shaped nanostructures were fabricated, which showed lower plasmon resonance damping compared to their planar counterparts. In addition, the undercut 3D nanostructures also enable more reliable lift-off in comparison with the planar nanostructures, with which high-quality silver nanohole arrays were fabricated which show distinct and extraordinary optical transmission in the visible range.
机译：我们报告了双层样电子束光刻工艺，仅使用单个氢倍半硅氧烷（HSQ）抗蚀剂层即可获得三维（3D）纳米结构。该工艺利用低能量（1.5 keV）电子辐照的短穿透深度来首先获得部分交联的HSQ顶层，然后使用高压电子束（30 keV）获得自对准底切（例如蘑菇形）形）和独立的HSQ纳米结构。基于定义明确的3D抗蚀剂图案，只需沉积金属层即可直接以高保真度制作3D金属纳米结构。例如，制造了涂有Ag的蘑菇形纳米结构，与平面对应结构相比，该结构显示出较低的等离子体共振衰减。此外，与平面纳米结构相比，底切3D纳米结构还可以实现更可靠的剥离，通过平面纳米结构可以制造出高质量的银纳米孔阵列，该阵列在可见光范围内显示出独特而卓越的光学透射率。

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