• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Electrical and optoelectrical modification of cadmium sulfide nanobelts by low-energy electron beam irradiation
【24h】

Electrical and optoelectrical modification of cadmium sulfide nanobelts by low-energy electron beam irradiation

机译：低能电子束辐照对硫化镉纳米带的电和光电改性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this report, we describe a method for modifying electrical and optoelectrical properties of CdS nanobelts using low-energy (lower than 10 keV) e-beam irradiation in a scanning electron microscope. The electrical conductivity of the nanobelts was dramatically improved via the irradiation of e-beams. The modified conductivity of the nanobelts depends on the energy of the e-beam; it exhibits a larger photocurrent and higher external quantum efficiency but slower time-response than that before the modification. A possible mechanism about the modification is the increase of electron accumulation (injected electrons) in the nanobelts due to e-beam irradiation. In addition, the optoelectrical modification could be caused by the trapped electrons in the nanobelts and the decrease of contact resistance between the nanobelts and metal electrodes induced by e-beam irradiation. The results of this work are significant for the in situ study of semiconductor nanostructures in the electron microscope. Besides, the method of electrical and optoelectrical modification presented here has potential application in electronics and optoelectronics.
机译：在此报告中，我们描述了一种在扫描电子显微镜中使用低能量（低于10 keV）电子束辐照来修饰CdS纳米带的电气和光电特性的方法。通过电子束的照射，纳米带的电导率得到了显着提高。纳米带的电导率的改变取决于电子束的能量。与改性前相比，它具有更大的光电流和更高的外部量子效率，但时间响应较慢。关于该修饰的可能机制是由于电子束辐射导致纳米带中电子累积（注入的电子）增加。此外，光电改性可能是由于纳米带中的电子被捕获以及电子束辐照引起的纳米带与金属电极之间的接触电阻降低而引起的。这项工作的结果对于电子显微镜中半导体纳米结构的原位研究具有重要意义。此外，本文提出的电气和光电修改方法在电子和光电领域具有潜在的应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号