• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy
【24h】

Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy

机译：通过分子束外延在Si（111）衬底上Ga辅助生长GaAs纳米线的生长图

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

For the Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy, growth temperature, As flux, and Ga flux have been systematically varied across the entire window of growth conditions that result in the formation of nanowires. A range of GaAs structures was observed, progressing from pure Ga droplets under negligible As flux through horizontal nanowires, tilted nanowires, vertical nanowires, and nanowires without droplets to crystallites as the As flux was increased. Quantitative analysis of the resulting sample morphology was performed in terms of nanowire number and volume density, number yield and volume yield of vertical nanowires, diameter, length, as well as the number and volume density of parasitic growth. The result is a growth map that comprehensively describes all nanowire and parasitic growth morphologies and hence enables growth of nanowire samples in a predictive manner. Further analysis indicates the combination of global Ga flux and growth temperature determines the total density of all objects, whereas the global As/Ga flux ratio independently determines the resultant sample morphology. Several dependencies observed here imply that all objects present on the substrate surface, i.e. both nanowires and parasitic structures, originate from Ga droplets.
机译：对于通过分子束外延在Si（111）衬底上进行Ga辅助生长的GaAs纳米线，生长温度，As通量和Ga通量在整个生长条件的窗口内系统地变化，从而导致纳米线的形成。观察到一定范围的GaAs结构，从As流量可忽略不计的纯Ga液滴通过水平纳米线，倾斜纳米线，垂直纳米线和无液滴的纳米线，随着As流量的增加，逐渐发展为微晶。根据纳米线的数量和体积密度，垂直纳米线的数量产量和体积产量，直径，长度以及寄生生长的数量和体积密度，对所得样品的形态进行了定量分析。结果是一个生长图，该图全面描述了所有纳米线和寄生虫的生长形态，因此能够以可预测的方式生长纳米线样品。进一步的分析表明，总体Ga通量和生长温度的组合决定了所有物体的总密度，而总体As / Ga通量比则独立地决定了所得样品的形态。在此观察到的几种依赖性暗示存在于衬底表面上的所有物体，即纳米线和寄生结构均源自Ga液滴。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号