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Regularly patterned multi-section GaN nanorod arrays grown with a pulsed growth technique

机译：通过脉冲生长技术生长的规则图案化多节GaN纳米棒阵列

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摘要

The growth of regularly. patterned multi-section GaN nanorod (NR) arrays based on a pulsed growth technique with metalorganic chemical vapor deposition is demonstrated. Such an NR with multiple sections of different cross-sectional sizes is formed by tapering a uniform cross section to another through stepwise. decreasing. of the. Ga supply duration to reduce. the size of the catalytic Ga droplet. Contrast line structures are observed in either a scanning electron microscopy or transmission electron microscopy image of an NR. Such a contrast line-marker corresponds to a thin Ga-rich layer formed at the beginning of GaN precipitation of a pulsed. growth cycle and illustrates the boundary between two successive growth cycles in pulsed growth. By analyzing the geometry variation of the contrast line-markers, the morphology evolution in the growth of a multi-section NR, including a tapering process, can be traced. Such a morphology variation is controlled by the size of the catalytic Ga droplet and its coverage range on the slant facets at the top of an NR. The comparison of emission spectra. between single-, two-, and three-section GaN NRs with sidewall InGaN/GaN quantum wells indicates that a multi-section NR can lead to a significantly broader sidewall emission spectrum.
机译：定期增长。演示了基于脉冲生长技术和金属有机化学气相沉积的图案化多节GaN纳米棒（NR）阵列。这种具有不同横截面尺寸的多个横截面的NR是通过逐步将均匀横截面逐渐变细而形成的。减少。的。镓的供应持续时间减少。催化Ga液滴的大小。在NR的扫描电子显微镜或透射电子显微镜图像中观察到对比线结构。这种对比线标记对应于在脉冲的GaN沉淀开始时形成的富Ga薄层。生长周期，并说明了脉冲生长中两个连续生长周期之间的边界。通过分析对比线标记的几何变化，可以追踪多节NR的生长过程中的形态演变，包括逐渐变细的过程。这种形态变化受催化Ga液滴的大小及其在NR顶部倾斜面上的覆盖范围的控制。发射光谱的比较。带有侧壁InGaN / GaN量子阱的单截面，二截面和三截面GaN NR之间的差异表明多截面NR可以导致明显更宽的侧壁发射光谱。

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