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Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

机译：氢对非晶氧化物薄膜晶体管中动态电荷传输的影响

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摘要

Hydrogen in zinc oxide based semiconductors functions as a donor or a defect de-activator depending on its concentration, greatly affecting the device characteristics of oxide thin-film transistors (TFTs). Thus, controlling the hydrogen concentration in oxide semiconductors is very important for achieving high mobility and minimizing device instability. In this study, we investigated the charge transport dynamics of the amorphous semiconductor InGaZnO at various hydrogen concentrations as a function of the deposition temperature of the gate insulator. To examine the nature of dynamic charge trapping, we employed short-pulse current-voltage and transient current-time measurements. Among various examined oxide devices, that with a high hydrogen concentration exhibits the best performance characteristics, such as high saturation mobility (10.9 cm(2) v(-1) s(-1)), low subthreshold slope (0.12 V/dec), and negligible hysteresis, which stem from low defect densities and negligible transient charge trapping. Our finding indicates that hydrogen atoms effectively passivate the defects in subgap states of the bulk semiconductor, minimizing the mobility degradation and threshold voltage instability. This study indicates that hydrogen plays a useful role in TFTs by improving the device performance and stability.
机译：基于氧化锌的半导体中的氢取决于其浓度而充当施主或缺陷钝化剂，极大地影响了氧化物薄膜晶体管（TFT）的器件特性。因此，控制氧化物半导体中的氢浓度对于实现高迁移率并使器件不稳定性最小化非常重要。在这项研究中，我们研究了在各种氢浓度下非晶半导体InGaZnO的电荷传输动力学，其是栅极绝缘体沉积温度的函数。为了检查动态电荷陷阱的性质，我们采用了短脉冲电流-电压和瞬态电流-时间测量。在各种经过检查的氧化物器件中，氢浓度高的器件表现出最佳的性能特征，例如高饱和迁移率（10.9 cm（2）v（-1）s（-1）），低亚阈值斜率（0.12 V / dec）和滞后可以忽略不计，这归因于缺陷密度低和瞬态电荷陷阱可以忽略不计。我们的发现表明，氢原子可有效钝化块状半导体亚能级缺陷，从而将迁移率降低和阈值电压不稳定性降至最低。这项研究表明，氢通过改善器件性能和稳定性在TFT中发挥着重要作用。

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