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Epitaxial nickel disilicide with low resistivity and excellent reliability

机译：低电阻率和高可靠性的外延二硅化镍

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Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 mu Omega cm in the experimental results and up to 14.93 mu Omega cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.
机译：形成了超薄的外延NiSi2，并通过电子显微镜和X射线衍射检查了其结构。与以前的报道相比，外延NiSi2的测量电阻率是前所未有的低，在实验结果中达到7μΩcm，而在改性后高达14.93μΩcm。在不同的温度和电流密度下进行了研究以了解其电子特性，其可靠性比传统的多晶同类产品高1.5倍。利用布莱克方程和测得的平均失效时间（MTTF）来获得外延和多晶硅NiSi2的可靠性特征。每个MTTF的置信区间为95％，确认了单一故障模式。观察到电迁移现象是故障机理。我们的结果提供了证据，表明外延NiSi2是未来电子产品的有希望的接触材料。

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