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首页> 外文期刊>RSC Advances >Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD
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Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD

机译：意外掺杂的高电阻率GaN层具有通过MOCVD生长的InGaN中间层

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摘要

High-resistivity GaN (HR-GaN) epilayers with an in situ annealed InGaN interlayer were grown by MOCVD technique. Hall-effect measurements show a background carrier concentration as low as 1.0 x 10(12) cm(-3) and a high sheet resistivity of 2.1 x 10(8) Omega per square. Combining the high-resolution X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy characterization, the compensation mechanism through the carbon acceptors impurities induced by increased edge-type threading dislocations (TDs) was demonstrated. Additionally, few increase of the screw TDs density in the HR-GaN epilayers by introducing the annealed InGaN interlayer has been demonstrated, which is beneficial to the device reliability in AlGaN/GaN high electron mobility transistors.
机译：通过MOCVD技术生长具有原位退火InGaN中间层的高电阻GaN（HR-GaN）外延层。霍尔效应测量显示背景载流子浓度低至1.0 x 10（12）cm（-3），高薄层电阻率为每平方2.1 x 10（8）Ω。结合高分辨率X射线衍射，透射电子显微镜和二次离子质谱表征，证明了通过增加的边缘型螺纹位错（TDs）诱导的碳受体杂质的补偿机理。此外，已证明通过引入退火的InGaN中间层几乎不会增加HR-GaN外延层中的螺钉TD密度，这有利于AlGaN / GaN高电子迁移率晶体管的器件可靠性。

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