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首页> 外文期刊>RSC Advances >Ru doping enhanced resistive switching behavior in InGaZnO thin films
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Ru doping enhanced resistive switching behavior in InGaZnO thin films

机译：Ru掺杂增强了InGaZnO薄膜中的电阻切换行为

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摘要

In this paper, ruthenium (Ru) doped InGaZnO (IGZO:Ru) thin films were deposited by magnetron co-sputtering and the resistive switching behaviors were investigated. It was found that an appropriate Ru doping could weaken the bonding interaction between metal and oxygen atoms, facilitate the formation of robust conductive filaments, and enhance the electrical field locally, resulting in significantly enhanced bipolar resistive switching properties and a stable OFF/ON ratio of 105. But an excessive doping of Ru would accelerate the nucleation and formation of conductive filaments and, tiny and fragile conductive filaments were unexpectedly generated. In such a case, a high resistive state was reached even when no negative bias voltage was applied, resulting in volatile resistive behavior. A model was suggested to understand the effect of Ru doping on the properties of the thin films.
机译：本文通过磁控共溅射沉积了钌（Ru）掺杂的InGaZnO（IGZO：Ru）薄膜，并研究了其电阻切换行为。发现适当的Ru掺杂可削弱金属与氧原子之间的键合相互作用，促进形成坚固的导电细丝，并局部增强电场，从而显着增强双极性电阻开关性能和稳定的OFF / ON比。 105.但是，Ru的过量掺杂会加速导电丝的形核和形成，并且意外地产生了细小而易碎的导电丝。在这种情况下，即使没有施加负偏压也达到高电阻状态，导致挥发性的电阻行为。建议建立模型以了解Ru掺杂对薄膜性能的影响。

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