Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Guanjun You; Jie Liu; Zhenyu Jiang; Li Wang; N. A. El-Masry; A. M. Hosalli; Salah M. Bedair; Jian Xu

首页> 外文期刊>Optics Letters >Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

【24h】

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

机译：在GaN纳米线上生长的半极性和非极性InGaN / GaN量子阱中增强的辐射复合和抑制的俄歇过程

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.

机译：使用可变温度光致发光和时间分辨光致发光（TRPL）研究了共形生长在n-GaN纳米线上（NWs）的半极性和非极性InGaN / GaN多量子阱（MQW）改善的发光特性的机理。发现减少的内部极化电场是观察到的量子阱在NW上的辐射复合率和内部量子效率提高的原因。此外，依赖于激发的TRPL结果表明，在NW上生长的MQW中，俄歇重组显着降低，这可归因于在GaN纳米结构上生长的MQW的位错密度超低。

著录项

来源
《Optics Letters》 |2014年第6期|共4页
作者
Guanjun You; Jie Liu; Zhenyu Jiang; Li Wang; N. A. El-Masry; A. M. Hosalli; Salah M. Bedair; Jian Xu;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires [J] . Guanjun You, Jie Liu, Zhenyu Jiang, Optics Letters . 2014,第6期

机译：在GaN纳米线上生长的半极性和非极性InGaN / GaN量子阱中增强的辐射复合和抑制的俄歇过程
2. Impact of carrier localization on radiative recombination times in semipolar (2021) plane InGaN/GaN quantum wells [J] . R. Ivanov, S. Marcinkevicius, Y. Zhao, Applied Physics Letters . 2015,第21期

机译：载流子定位对半极性（2021）平面InGaN / GaN量子阱中辐射复合时间的影响
3. Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots [J] . Patra Saroj Kanta, Wang Tong, Puchtler Tim J., Physica status solidi, B. Basic research . 2017,第8期

机译：非极性Ingan / GaN量子点中辐射重组寿命的理论与实验分析
4. Optical enhancement of InGaN/GaN quantum wells grown on epitaxial lateral overgrown semipolar (11-22) GaN [C] . Sung-Nam Lee, Jihoon Kim International meeting on information display;International display manufacturing conference and Asia display;IMID/IDMC/Asia Display 2010 . 2010

机译：在外延横向过生长的半极性（11-22）GaN上生长的InGaN / GaN量子阱的光学增强
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Epitaxial Growth of GaN Core and InGaN/GaN MultipleQuantum Well Core/Shell Nanowires on a Thermally Conductive BerylliumOxide Substrate [O] . MuhammadAli Johar, Aadil Waseem, Mostafa Afifi Hassan, 2020

机译：GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
7. Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires [O] . Gacevic, Z., Holmes, M., Chernysheva, E., 2017

机译：量子点中线性偏振单光子的发射包含在铅笔状InGaN / GaN的非极性，半极性和极性部分中纳米线

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

摘要

著录项

相似文献

相关主题

期刊订阅