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首页> 外文期刊>Optics Letters >Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes
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Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes

机译：纳米球形透镜光刻图案化的底部和顶部光子晶体InGaN / GaN发光二极管的效率改善和下垂行为

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摘要

Large-scale SiO_2 nanodisk arrays fabricated by nanospherical-lens lithography are embedded in the n-GaN and p-GaN layer of an InGaN/GaN light-emitting diode (LED) to produce photonic crystal (PC) structures for efficiency improvement. Following the obvious reduction of view angle, the light output power of bottom, top, and double PC LEDs is enhanced by 74.5%, 60.1%, and 88.2% compared to that of a conventional LED at 350 mA current, respectively. Despite the enhanced external quantum efficiency due to improved crystalline quality and light extraction, these PC LEDs exhibit lower peak efficiency current density and more serious efficiency droop than conventional LEDs. Combined with the rate equation, the droop mechanisms of PC LEDs have also been investigated experimentally and by simulation.
机译：通过纳米球形透镜光刻制造的大规模SiO_2纳米磁盘阵列被嵌入InGaN / GaN发光二极管（LED）的n-GaN和p-GaN层中，以产生光子晶体（PC）结构以提高效率。随着视角的明显减小，底部，顶部和双PC LED的光输出功率分别比传统LED在350 mA电流下的光输出功率提高了74.5％，60.1％和88.2％。尽管由于改善了晶体质量和光提取而提高了外部量子效率，但与传统LED相比，这些PC LED仍具有较低的峰值效率电流密度和更严重的效率下降。结合速率方程，还通过实验和仿真研究了PC LED的下垂机制。

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