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首页> 外文期刊>Physica, B. Condensed Matter >Uniaxial compressive stress induced nuclear quadrupole interaction at the Cd-111 nucleus in n-doped silicon
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Uniaxial compressive stress induced nuclear quadrupole interaction at the Cd-111 nucleus in n-doped silicon

机译：n掺杂硅中Cd-111核的单轴压应力诱导核四极相互作用

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Stress induced quadrupole interaction at the probe nucleus (Cd-III) in silicon has been studied using the perturbed gamma-gamma angular correlation (PAC) method. The extra nuclear field, at the sites of the nuclei, is produced via the disturbances of the surrounding charges by the action of a uniaxial compressive stress on the samples. However, the probes situated at various lattice locations in the sample showed different responses for the same value of stress. The various lattice environments are mainly caused by the involvement of either tellurium or antimony donor atoms in the samples. As a result, the donor free substitutional probe atoms experience a finite nuclear quadrupole interaction due to the broken symmetry of the charge distribution upon uniaxial compression; those probe atoms, which form pairs with donors, exhibit a strong electric-field gradient (EFG) that appears to be pressure independent. (c) 2005 Elsevier B.V. All rights reserved.
机译：硅中的探针核（Cd-III）处的应力诱导的四极相互作用已使用扰动的伽马-伽马角相关（PAC）方法进行了研究。在核位置处的额外核场是通过对样品的单轴压缩应力的作用，通过周围电荷的扰动产生的。但是，位于样品中各个晶格位置的探针对于相同的应力值显示出不同的响应。各种晶格环境主要是由于样品中碲或锑供体原子的参与所致。结果，由于单轴压缩时电荷分布的对称性受到破坏，无供体的取代探针原子经历了有限的核四极相互作用。与供体形成对的那些探针原子表现出强电场梯度（EFG），该电场梯度似乎与压力无关。 （c）2005 Elsevier B.V.保留所有权利。

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