Formation of source and drain of a-Si : H TFT by ion implantation through metal technique

Van Hieu N

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Formation of source and drain of a-Si : H TFT by ion implantation through metal technique

机译：金属技术离子注入形成a-Si：H TFT的源漏。

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Ion implantation through metal technique (ITM) has been applied to form source and drain regions of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) with an inverted staggered electrode structure. The metallic drain and source electrodes were used as scattering layers. Ten nanometers thickness of drain and source metallization molybdenum and titanium have been successfully selected to fabricate TFTs with good performance. The ON-OFF current ratio and the field-effect mobility of the TFT's were about 105 and 0.18cm(2)/V s, respectively. (c) 2006 Elsevier B.V. All rights reserved.

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《Physica, B. Condensed Matter》 |2007年第2期|共5页
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Van Hieu N;
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a-Si : H TFT; ITM; PECVD; hydrogenated amorphous silicon; THIN-FILM TRANSISTORS; AMORPHOUS-SILICON; CONTACTS;

机译：a-Si：H TFT;ITM;PECVD;氢化非晶硅;薄膜晶体管;非晶硅;触点;

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1. Formation of source and drain of a-Si : H TFT by ion implantation through metal technique [J] . Van Hieu N Physica, B. Condensed Matter . 2007,第1a2期

机译：金属技术离子注入形成a-Si：H TFT的源漏。
2. Formation of source and drain regions for a-Si:H thin-film transistors by low-energy ion doping technique [J] . Yoshida A., Setsune K. IEEE Electron Device Letters . 1988,第2期

机译：通过低能离子掺杂技术形成a-Si：H薄膜晶体管的源区和漏区
3. Study on Channel Current Variation and Bias Stress Behavior of Fabricated a-Si:H TFTs with Wavy-Edge Source/Drain Electrodes [J] . Jeong J, Chung S, Hong Y, Journal of the Korean Physical Society . 2009,第1期

机译：波浪边源/漏电极制造的a-Si：H TFT的沟道电流变化和偏压应力行为研究
4. Gate Overlapped Lightly Doped Drain Poly-Si TFTs Employing 45° Tilt Implant For Source and Drain [C] . Jae-Hoon Lee, Moon-Young Shin, HeeSun Shin, Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US) . 2004

机译：栅极重叠轻掺杂漏极多晶硅薄膜晶体管，采用45°倾斜注入进行源极和漏极注入
5. Implant Activated Source/Drain Regions for Self-Aligned IGZO TFT [D] . Chowdhury, Rahnuma Rifat . 2019

机译：用于自对准IGZO TFT的植入活性源/漏区
6. Investigation into Alternative Sample Preparation Techniques for the Determination of Heavy Metals in Stationary Source Emission Samples Collected on Quartz Filters [O] . Sharon L. Goddard, Richard J. C. Brown 2014

机译：测定石英滤池上固定源排放样品中重金属的其他样品制备技术的研究
7. Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA) [O] . Kouya Sugihara, Kiyoharu Shimoda, Tatsuya Okada, 2017

机译：使用蓝色激光二极管退火（BLDA）金属源和沥水的低温多Si TFT（BLDA）
8. Preparation and Characterization of Molecule-Based Transistors with a 50 Nonometer Source-Drain Separation Using Shadow Deposition Techniques: Towards Faster, More Sensitive Molecule-Based Devices [R] . Jones, E. T., Chyan, O. M., Wrighton, M. S. 1987

机译：使用阴影沉积技术制备和表征具有50个非均源漏极分子的分子晶体管：朝着更快，更灵敏的分子为基础的器件

Formation of source and drain of a-Si : H TFT by ion implantation through metal technique

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