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首页> 外文期刊>Physica, B. Condensed Matter >Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments
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Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments

机译：超高温退火处理后半绝缘4H-SiC中缺陷的行为

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We have recently explored the nature and stability of native defects in SI 4H-SiC after post-growth anneals between 1000 and 1800 degrees C from combined electron paramagnetic resonance (EPR) and low-temperature infrared photoluminescence (PL) experiments. In the present work we have extended these studies to SI 4H-SiC subjected to very high post-growth anneal temperatures (1900-2400 degrees C) where significantly enhanced carrier lifetimes have been recently reported for such conditions. Previously, the intensities of the V-C, V-Si, V-C-V-Si and SI-5 EPR decreased monotonically with anneals from 1200 to 1800 degrees C. In this work, surprisingly, many of these defects reappeared after annealing at 2100 degrees C and above. Similar annealing behavior was observed for the IR PL lines. Many defects are present during growth and these results illustrate the effects of the post-growth anneal treatments on their concentrations. Published by Elsevier B.V.
机译：最近，我们通过结合电子顺磁共振（EPR）和低温红外光致发光（PL）实验，在1000至1800摄氏度之间进行了生长后退火之后，研究了SI 4H-SiC中天然缺陷的性质和稳定性。在当前的工作中，我们已将这些研究扩展到承受非常高的生长后退火温度（1900-2400摄氏度）的SI 4H-SiC，其中最近报道了此类条件下的载流子寿命显着提高。以前，VC，V-Si，VCV-Si和SI-5 EPR的强度从1200到1800℃退火而单调降低。在这项工作中，令人惊讶的是，许多这些缺陷在2100℃及更高的温度下退火后重新出现。对于IR PL线观察到类似的退火行为。生长过程中存在许多缺陷，这些结果说明了生长后退火处理对其浓度的影响。由Elsevier B.V.发布

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