• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica, B. Condensed Matter >Radiation-produced defects in n-GaN
【24h】

Radiation-produced defects in n-GaN

机译：n-GaN中辐射产生的缺陷

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Radiation-produced defects in doped and nominally undoped n-GaN with charge carrier concentrations in a range of 4 x 10(16) cm(-3) to about 2 x 10(18) cm(-3) are investigated. Layers of n-GaN are irradiated with fast electrons at 0.9 MeV, Co-60 gamma rays and protons at 150keV. The production rates of radiation defects in n-GaN are estimated and compared with literature data. Annealing processes of radiation defects in n-GaN in the temperature range 100-700 degrees C are also discussed. The annealing behavior appears to be complicated. Two temperature intervals, from T = 100 to 400 degrees C and from T = 500 to 700 degrees C, are characteristic for modification and annealing processes of radiation-produced defects in n-GaN. (C) 2007 Elsevier B.V. All rights reserved.
机译：研究了载流子浓度在4 x 10（16）cm（-3）至约2 x 10（18）cm（-3）范围内的掺杂和名义上未掺杂的n-GaN中的辐射产生的缺陷。用0.9 MeV的快电子，Co-60伽马射线和150keV的质子辐照n-GaN层。估计了n-GaN中辐射缺陷的产生率，并将其与文献数据进行了比较。还讨论了在100-700摄氏度的温度范围内n-GaN中辐射缺陷的退火过程。退火行为似乎很复杂。 T = 100至400摄氏度和T = 500至700摄氏度这两个温度区间是n-GaN中辐射产生的缺陷的改性和退火工艺的特征。 （C）2007 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号