Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy

Ohno Y; Taishi T; Yonenaga I; Ichikawa S; Hirai R; Takeda S

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Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy

机译：用光分子束外延控制伪晶ZnSe层中的堆垛层错区域

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Pseudomorphic ZnSe layers on GaAs(001) were grown by molecular beam epitaxy under the light illumination with photon energy of about 1.8 eV. In the layers, isolated Shockley-type stacking faults on (111), bordering not on the ZnSe/GaAs interface but on the ZnSe surface, as well as the well-known stacking fault pairs, were formed. The sum of the stacking fault areas was small in comparison with the layers grown by molecular beam epitaxy without light illumination. (C) 2007 Elsevier B.V. All rights reserved.

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《Physica, B. Condensed Matter》 |2007年第0期|共4页
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Ohno Y; Taishi T; Yonenaga I; Ichikawa S; Hirai R; Takeda S;
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正文语种 eng
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stacking faults; ZnSe; molecular beam epitaxy; transmission electron microscopy; MISFIT DISLOCATION SOURCES; LIGHT-EMITTING-DIODES; GREEN LASER-DIODE; WHITE LEDS; DEGRADATION; GAAS; SURFACE; MOBILITY; DEFECTS;

机译：堆垛层错;ZnSe;分子外延;透射电子显微镜;错位错源;发光二极管;绿色激光二极管;白光LED;降解;GAAS;表面;流动性;缺陷;

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1. Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy [J] . Ohno Y, Taishi T, Yonenaga I, Physica, B. Condensed Matter . 2007,第0期

机译：用光分子束外延控制伪晶ZnSe层中的堆垛层错区域
2. Stacking faults in pseudomorphic ZnSe-GaAs and latticematched ZnSe-In_(0.04)Ga_(0.96)As layers [J] . Jean-Marc Bonard, Jean-Daniel Ganiere, Stefan Heun, Philosophical Magazine Letters . 1997,第4期

机译：准晶态ZnSe-GaAs和晶格匹配的ZnSe-In_（0.04）Ga_（0.96）As层中的堆叠断层
3. Transmission electron microscopy study of stacking-fault trapezoids and stacking-fault tubes in ZnSe/GaAs(001) pseudomorphic epitaxial layers [J] . N. Wang, I. K. Sou, K. K. Fung Philosophical Magazine Letters . 1997,第3期

机译：ZnSe / GaAs（001）拟晶外延层中的断层梯形和断层管的透射电镜研究
4. Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy [C] . Y. Ohno, T. Taishi, I. Yonenaga, International Conference on Defects in Semiconductors; 20070722-27; Albuquerque,NM(US) . 2007

机译：用光分子束外延控制伪晶ZnSe层中的堆垛层错区域
5. Photoluminescence and Electrical Properties of Impurity-doped ZnSe Layers Grown by Molecular Beam Epitaxy利用統計を見る [D] . Ohkawa Kazuhiro 1992

机译：分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
6. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy [O] . Federico Baiutti, Georg Christiani, Gennady Logvenov 2014

机译：利用氧化物分子束外延技术实现层状氧化物结构中的精确缺陷控制
7. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy [O] . Federico Baiutti, Georg Christiani, Gennady Logvenov 2014

机译：利用氧化物分子束外延实现层状氧化物结构的精确缺陷控制
8. Thin Layer Electrochemical Studies of ZnS, ZnSe, and ZnTe Formation byElectrochemical Atomic Layer Epitaxy (ECALE) [R] . Colletti, L. P., Thomas, S., Wilmer, E., 1997

机译：电化学原子层外延（ECaLE）对Zns，Znse和ZnTe形成的薄层电化学研究

Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy

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