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首页> 外文期刊>Physica, B. Condensed Matter >Enhancement of electrical conductivity by Al-doped ZnO ceramic varistors
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Enhancement of electrical conductivity by Al-doped ZnO ceramic varistors

机译：铝掺杂ZnO陶瓷压敏电阻的导电性增强

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摘要

Zn1-xAlxO ceramic samples with various x values (0.00 <= x <= 0.20) are sintered in air at temperatures of 850 degrees C for 10h and then quenched to room temperature. Structural, surface morphology and I-V characteristics of the samples are investigated using X-ray diffractometer (XRD), scanning electron microscope (SEM) and dc electrical measurements. It is found that addition of Al up to 0.05 does not influence the well-known peaks related to wurtzite structure of ZnO ceramics, and other unknown peaks could be formed above 0.05 of Al. The cell parameters of Al-doped samples are a little shorter than the undoped ZnO, and also the shape and size of grains are clearly affected. Average crystalline diameters, deduced from XRD analysis, are between 39.90 and 47.18 nm, which are 25 times lower than those obtained from SEM micrographs. Although breakdown field, nonlinear coefficient and barrier height are generally decreased by Al addition, the electrical conductivity is improved. These results are discussed in terms of the interaction mechanism between atoms of Al and Zn in both under and over-doped regions.
机译：将具有各种x值（0.00 <= x <= 0.20）的Zn1-xAlxO陶瓷样品在空气中于850摄氏度的温度下烧结10小时，然后淬火至室温。使用X射线衍射仪（XRD），扫描电子显微镜（SEM）和直流电测量来研究样品的结构，表面形态和I-V特性。发现Al的添加至多0.05不会影响与ZnO陶瓷的纤锌矿结构有关的众所周知的峰，并且在0.05以上的Al可能形成其他未知峰。 Al掺杂样品的晶胞参数比未掺杂ZnO的晶胞参数短一些，并且晶粒的形状和尺寸也受到明显影响。通过XRD分析得出的平均晶体直径在39.90和47.18 nm之间，比从SEM显微照片获得的平均晶体直径低25倍。尽管通过添加Al通常会降低击穿场，非线性系数和势垒高度，但导电性却得到了改善。根据掺杂区和掺杂区中Al和Zn原子之间的相互作用机理讨论了这些结果。

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