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Influence of Al-doping on the structure and optical properties of ZnO films

机译:Al掺杂对ZnO薄膜结构和光学性能的影响

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Al-doped ZnO (ZnO:Al) thin films with c-axis preferred orientation were deposited on glass substrates using the radio frequency reactive magnetron Sputtering technique. The effect of Al concentrations on the microstructure and the luminescence properties of the ZnO:Al thin films were studied by atomic force microscopy (AFM), X-ray diffraction (XRD), and fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted by appropriate Al concentrations; the photoluminescence spectra (PL) of the samples were measured at room temperature. Strong blue peak located at 437 nm (2.84 eV) and two weak green peaks located at about 492 nm (2.53 eV) and 524 nm (2.37 eV) were observed from the PL spectra of the four samples. The origin of these emissions was discussed. In addition, absorption and transmittance properties of the samples were researched by UV spectrophotometer: the UV absorption edge shifted to a shorter wavelength first as Al was incorporated, and then to a longer wavelength with the increasing Al concentrations. The optical band gaps calculated based on the quantum confinement model are in good agreement with the experimental values.
机译:使用射频反应磁控溅射技术,将具有c轴优先取向的Al掺杂ZnO(ZnO:Al)薄膜沉积在玻璃基板上。通过原子力显微镜(AFM),X射线衍射(XRD)和荧光分光光度计研究了铝浓度对ZnO:Al薄膜微结构和发光性能的影响。结果表明,适当的Al浓度促进了薄膜的结晶。在室温下测量样品的光致发光光谱(PL)。从四个样品的PL光谱中观察到位于437 nm(2.84 eV)的强蓝峰和位于492 nm(2.53 eV)和524 nm(2.37 eV)的两个弱绿峰。讨论了这些排放物的来源。此外,通过紫外分光光度计研究了样品的吸收和透射特性:随着铝的掺入,紫外吸收边缘首先移至较短波长,然后随着铝浓度的增加而移至较长波长。基于量子约束模型计算出的光学带隙与实验值吻合良好。

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