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首页> 外文期刊>Physica, B. Condensed Matter >Simulation study of GaN n-MOSFETs by two-dimensional full band Monte Carlo approach
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Simulation study of GaN n-MOSFETs by two-dimensional full band Monte Carlo approach

机译：二维全频带蒙特卡罗方法对GaN n-MOSFET的仿真研究

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摘要

Electrical properties of GaN n-MOSFET are presented by simulation study using the two-dimensional full band Monte Carlo approach. The band structure was calculated by the first-principle total-energy pseudopotential method within local-density-functional formalism. The various scatterings, such as polar optical scattering, impurity scattering, acoustic phonon scattering, and intervalley scattering, were included in the simulation. The vertical structure of the GaN n-MOSFET is Au/SiO_2 (50 nm)/GaN with the channel of 300 nm length. The simulation results showed that the device is normally off with a threshold voltage of about 3.0 V. I_(DS) is about 4.96 A/cm at V _(DS)=15 V and V_(GS)=5 V. The maximum transconductance is about 0.44 S/cm at V_(GS)=13.75 V and V_(DS)=12 V. The maximum current gain cutoff frequency f_T is about 86 GHz at V _(GS)=8.75 V and I_(DS)=2 A/cm.
机译：通过使用二维全频带蒙特卡洛方法的仿真研究，介绍了GaN n-MOSFET的电性能。通过局部密度泛函形式内的第一原理全能first势法计算能带结构。模拟中包括各种散射，例如极性光学散射，杂质散射，声子声子散射和音程散射。 GaN n-MOSFET的垂直结构为Au / SiO_2（50 nm）/ GaN，沟道长度为300 nm。仿真结果表明，该器件通常在约3.0 V的阈值电压下处于关闭状态。在V _（DS）= 15 V和V_（GS）= 5 V时，I_（DS）约为4.96 A / cm。最大跨导在V_（GS）= 13.75 V和V_（DS）= 12 V时约为0.44 S / cm。在V _（GS）= 8.75 V和I_（DS）= 2时，最大电流增益截止频率f_T约为86 GHz A / cm。

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