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首页> 外文期刊>Physica, B. Condensed Matter >Analysis of mechanical properties of N-2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane
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Analysis of mechanical properties of N-2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

机译：单前体六甲基乙二硅烷化学气相沉积法分析N-2原位掺杂多晶3C-SiC薄膜的力学性能

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摘要

This paper describes the mechanical properties of poly (polycrystalline) 3C-SiC thin films with N-2 in situ doping. In this work, in situ doped poly 3C-SiC film was deposited by using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200 degrees C using single-precursor hexamethyildisilane: Si-2(CH3)(6) (HMDS) as Si and C precursors, and 0 similar to 100 sccm N-2 as the dopant source gas. The mechanical properties of doped poly 3C-SiC thin films were measured by nano-indentation. Young's modulus and hardness were measured to be 285 and 35 GPa at 0 sccm N-2, respectively. Young's modulus and hardness decreased with increasing N-2 flow rate. Surface morphology was evaluated by atomic force microscopy (AFM) according to N-2 flow rate.
机译：本文介绍了具有N-2原位掺杂的聚（多晶）3C-SiC薄膜的力学性能。在这项工作中，使用大气压化学气相沉积（APCVD）方法在1200摄氏度下使用单前体六甲基乙硅烷：Si-2（CH3）（6）（HMDS）作为Si，沉积了原位掺杂的聚3C-SiC膜。和C的前驱体，0类似于100 sccm N-2作为掺杂源气体。通过纳米压痕法测量了掺杂的3C-SiC薄膜的力学性能。在0sccm N-2下测得的杨氏模量和硬度分别为285和35GPa。杨氏模量和硬度随着N-2流量的增加而降低。根据N-2流速，通过原子力显微镜（AFM）评估表面形态。

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