Structural and optical properties of N-doped β-Ga_2O _3 films deposited by RF magnetron sputtering

Zhang Y.; Yan J.; Li Q.; Qu C.; Zhang L.; Li T.

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Structural and optical properties of N-doped β-Ga_2O _3 films deposited by RF magnetron sputtering

机译：射频磁控溅射沉积N掺杂β-Ga_2O_3薄膜的结构和光学性质

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The N-doped β-Ga_2O_3 lms were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga_2O_3 films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed.

机译：通过RF磁控溅射以不同的氨分压比（从0％到30％）在Si和石英衬底上生长N掺杂的β-Ga_2O_3lms。研究了氨分压比和退火处理对光学和结构性能的影响。随着氨分压的增加，N掺杂β-Ga_2O_3薄膜的微观结构，透光率，光吸收率和能隙均发生了显着变化。观察并讨论了绿色，蓝色和紫外线发射带。

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《Physica, B. Condensed Matter》 |2011年第16期|共4页
作者
Zhang Y.; Yan J.; Li Q.; Qu C.; Zhang L.; Li T.;
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N-doped β-Ga_2O_3; Optical band gap; Post-annealed; RF magnetron sputtering; Transparent conductive oxide;

机译：N掺杂β-Ga_2O_3;带隙;后退火;RF磁控溅射;透明导电氧化物;

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1. Structural and optical properties of N-doped β-Ga_2O _3 films deposited by RF magnetron sputtering [J] . Zhang Y., Yan J., Li Q., Physica, B. Condensed Matter . 2011,第15a16期

机译：射频磁控溅射沉积N掺杂β-Ga_2O_3薄膜的结构和光学性质
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Structural and optical properties of N-doped β-Ga_2O _3 films deposited by RF magnetron sputtering

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