Two-dimensional electron transport in AlGaN/GaN heterostructures

Tan R.-B.; Xu W.; Zhou Y.; Zhang X.-Y.; Qin H.

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Two-dimensional electron transport in AlGaN/GaN heterostructures

机译：AlGaN / GaN异质结构中的二维电子传输

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We present a theoretical study of electron transport properties of two-dimensional electron gas in AlGaN/GaN heterostructures. By assuming a drifted Fermi-Dirac distribution and taking into account all major scattering mechanisms, including polar optical and acoustic phonons, background impurities, dislocation and interface roughness, the momentum- and energy-balance equations derived from Boltzmann equation are solved self-consistently. The dependence of the electron drift velocity and electron temperature as a function of the applied electric field are obtained and discussed.

机译：我们提出了二维电子气在AlGaN / GaN异质结构中的电子传输特性的理论研究。通过假设漂移的费米-狄拉克分布并考虑所有主要的散射机制，包括极性光学和声子，背景杂质，位错和界面粗糙度，可以自洽地求解从玻耳兹曼方程式导出的动量平衡和能量平衡方程式。得到并讨论了电子漂移速度和电子温度与所施加电场的关系。

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《Physica, B. Condensed Matter》 |2012年第21期|共4页
作者
Tan R.-B.; Xu W.; Zhou Y.; Zhang X.-Y.; Qin H.;
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正文语种 eng
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关键词
Drift velocity; Electron temperature; GaN; Two-dimensional electron gas;

机译：漂移速度;电子温度;GaN;二维电子气;

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1. Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties [J] . Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2005,第4期

机译：不同Al含量AlGaN / GaN异质结构中应变AlGaN层的结构表征及其对二维电子传输性能的影响
2. Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures [J] . Remziye Tuelek, Aykut Ilgaz, Sibel Goekden, Journal of Applied Physics . 2009,第1期

机译：高质量AlGaN / AlN / GaN和AlInN / AlN / GaN二维电子气异质结构的传输性能比较
3. Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN/GaN heterostructures [J] . P. Lorenzini, Z. Bougrioua, A. Tiberj, Applied Physics Letters . 2005,第23期

机译：AlGaN / GaN异质结构中二维电子气的量子和传输寿命
4. Two-dimensional electron gas transport properties in AlGaN/(In)GaN/AlGaN double-heterostructure field effect transistors [C] . Narihiko Maeda, Tadashi Saitoh, Kotaro STsubaki, Symposium on GaN and related alloys . 2000

机译：AlGaN / AlGaN双异质结构场效应晶体管中的二维电子气体输送性能
5. High-Mobility Two-Dimensional Electrons in Silicon/Silicon-Germanium Heterostructures: Realization and Transport Properties. [D] . Lu, Tzu-Ming. 2011

机译：硅/硅锗锗异质结构中的高迁移率二维电子：实现和传输性质。
6. Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy [O] . Tian Li Duan, Ji Sheng Pan, Ning Wang, 2017

机译：角分辨X射线光电子能谱研究Al2O3封端的GaN / AlGaN / GaN异质结构的表面极化
7. Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures [O] . Tülek, R., Ilgaz, A., Gökden, S., 2009

机译：高质量AlGaN / AlN / GaN和AlInN / AlN / GaN二维电子气异质结构的传输性能比较

Two-dimensional electron transport in AlGaN/GaN heterostructures

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