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首页> 外文期刊>Physica, B. Condensed Matter >Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect
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Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect

机译:赛尔效应增强硅光子晶体纳米腔的室温亚带隙发光

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摘要

We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma.
机译:我们报告了通过赛尔效应从硅中的子带隙光致发光的增强。我们将来自硅的缺陷发射耦合到光子晶体(PhC)纳米腔,这被认为是由于氢掺入晶格引起的。与未图案化的样品相比,我们观察到在室温下1550 nm处的发射增强了300倍,这可与硅带边缘发射相媲美。我们讨论了通过离子注入或通过用氢等离子体处理硅PhC纳米腔来引入更多缺陷,进一步提高这种发射的可能性。

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