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首页> 外文期刊>Physica, C. Superconductivity and its applications >Fabrication of high I-c film for GdBCO coated conductor by continuous in-plume PLD
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Fabrication of high I-c film for GdBCO coated conductor by continuous in-plume PLD

机译：通过连续在管内PLD制备用于GdBCO涂层导体的高I-c膜

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摘要

GdBa2Cu3Oy(GdBCO) films were fabricated on pulsed laser deposition (PLD)-CeO2/ion-beam-assisted deposition (IBAD)-Gd2Zr2O7/HasteIloy C276 metal substrate tapes using the continuous in-plume PLD method. The control of the target composition is important to improve the critical current density (J(c)) property, especially in the case of a short target-substrate distance. As a result, the critical current (I-c) value of 320 A/cm-W and the J(c) value of 3.2 MA/cm(2) were obtained by using the target composition of Gd:Ba:Cu = 1:23.4 (GdBa2Cu3.4Oy) in a short sample. It was also found that a high growth rate for the GdBCO film could be realized by crystal growth in the plume (in-plume) for the target. A twice higher growth rate was achieved by the in-plume PLD technique comparing with that in the conventional condition in which crystal growth takes place near the plume edge. In addition, in order to improve the 1, values in the external magnetic fields, we introduced the artificial pinning centers using a 5 mol%BaZrO3 doped GdBa2Cu3.4Oy target by the in-plume method. The BaZrO3 nanorods were effectively introduced by in-plume PLD and the obtained sample showed improved I-c-B-theta properties due to enhanced B parallel to c; the minimum I-c value of 25.6 A/cm-W at 3 T in the 1.6 mu m thick film.
机译：GdBa2Cu3Oy（GdBCO）膜是使用连续的内在PLD方法在脉冲激光沉积（PLD）-CeO2 /离子束辅助沉积（IBAD）-Gd2Zr2O7 / HasteIloy C276金属基底带上制成的。靶成分的控制对于提高临界电流密度（J（c））特性非常重要，尤其是在靶-基片距离较短的情况下。结果，通过使用目标组成Gd：Ba：Cu = 1：23.4获得了320 A / cm-W的临界电流（Ic）值和3.2 MA / cm（2）的J（c）值（GdBa2Cu3.4Oy）在简短的样本中。还发现，通过目标的羽流（在管内）中的晶体生长，可以实现GdBCO膜的高生长速率。与常规条件下在羽状边缘附近发生晶体生长的常规条件相比，通过内置PLD技术可实现两倍的生长速率。另外，为了改善外部磁场中的1值，我们通过插管法引入了使用5 mol％BaZrO3掺杂的GdBa2Cu3.4Oy靶材的人工钉扎中心。 BaZrO3纳米棒通过在管内PLD有效引入，所得样品由于B与c平行而增强，因此具有改善的I-c-B-θ特性。 1.6微米厚的薄膜在3 T下的最小I-c值为25.6 A / cm-W。

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