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首页> 外文期刊>Physica, C. Superconductivity and its applications >New Nb multi-layer fabrication process for large-scale SFQ circuits
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New Nb multi-layer fabrication process for large-scale SFQ circuits

机译：大型SFQ电路的新型Nb多层制造工艺

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摘要

We investigated the most suitable device structure for large-scale SFQ circuits and propose a new Nb 10-layer device structure that is composed of active layers including junctions at the top, PTL layers in the middle and DC power layers at the bottom. This device structure enables us to reduce the influence of the magnetic field due to large bias currents and to form a Nb/AlOx/Nb junction layer in the last part of the fabrication sequence. To achieve this structure, we developed a higher quality planarization that could remove the residual slight roughness after standard caldera planarization. We fabricated a diagnostic chip that is composed of test elements such as junctions, contacts, resistors and many kinds of process test patterns. We obtained sufficient characteristics for the diagnostic chips. Moreover, to evaluate the fabrication process, we designed and fabricated several shift registers. We confirmed the correct operation of an up to 2560-bit shift register having 10,281 junctions.
机译：我们研究了最适合大型SFQ电路的器件结构，并提出了一种新的Nb 10层器件结构，该结构由有源层组成，这些有源层包括顶部的结，中间的PTL层和底部的DC电源层。这种器件结构使我们能够减少大偏置电流引起的磁场影响，并在制造过程的最后一部分中形成Nb / AlOx / Nb结层。为了实现这种结构，我们开发了更高质量的平面化技术，可以去除标准破火山口平面化后残留的轻微粗糙度。我们制造了一个诊断芯片，该芯片由结，触点，电阻和多种过程测试图案等测试元素组成。我们为诊断芯片获得了足够的特性。此外，为了评估制造过程，我们设计并制造了多个移位寄存器。我们确认了具有10,281个结点的最多2560位移位寄存器的正确操作。

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