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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Doped GNR p-n Junction as High Performance NDR and Rectifying Device
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Doped GNR p-n Junction as High Performance NDR and Rectifying Device

机译：掺杂GNR p-n结作为高性能NDR和整流器件

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摘要

On the basis of density functional theory and nonequilibrium Green's function technique, we have presented theoretical results on transport properties of B- and N-doped aGNR p—n junction. The current—voltage characteristic of this system indicates robust negative differential resistance (NDR) behavior of it. Meanwhile, that p—n junction diode can be utilized as a highly efficient voltage rectifier. The calculations also reveal that the voltage rectifying efficiency can be highly enhanced by forming a tandem diode by connecting two single diodes in series. The variation of transport properties on the width of aGNR is also investigated. The NDR phenomena as well as the rectifying property can be well explained on the basis of relative shifting of discrete energy states of the conjugate system with applied bias, which in turn explains very strong coupling between the p and n regions of the diode.
机译：在密度泛函理论和非平衡格林函数技术的基础上，我们给出了B和N掺杂的aGNR p-n结输运性质的理论结果。该系统的电流-电压特性表明其强大的负差分电阻（NDR）性能。同时，该PN结二极管可以用作高效的电压整流器。计算还表明，通过串联连接两个单个二极管来形成串联二极管，可以大大提高电压整流效率。还研究了运输特性在aGNR宽度上的变化。 NDR现象以及整流特性可以在共轭体系的离散能量状态与施加的偏置的相对偏移的基础上很好地解释，这反过来又说明了二极管p和n区域之间的强耦合。

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