...
【24h】

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

机译:通过结合双层氢化纳米晶硅结构改进非晶硅n-i-p太阳能电池

获取原文
获取原文并翻译 | 示例
           

摘要

We develop a double-layer p-type hydrogenated nanocrystalline silicon (p-nc-Si:H) structure consisting of a low hydrogen diluted i/p buffer layer and a high hydrogen diluted p-layer to improve the hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells. The electrical, optical and structural properties of p-nc-Si:H films with different hydrogen dilution ratio (R_H) are investigated. High conductivity, low activation energy and wide band gap are achieved for the thin films. Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the thin films contain nanocrystallites with grain size around 3-5 nm embedded in the amorphous silicon matrix. By inserting a p-nc-Si:H buffer layer at the i/p interface, the overall performance of the solar cell is improved significantly compared to the bufferless cell. The improvement is correlated with the reduction of the density of defect states at the i/p interface.
机译:我们开发了由低氢稀释的i / p缓冲层和高氢稀释的p层组成的双层p型氢化纳米晶硅(p-nc-Si:H)结构,以改善氢化非晶硅(a- Si:H)夹持太阳能电池。研究了不同氢稀释比(R_H)的p-nc-Si:H薄膜的电,光学和结构性能。薄膜实现了高电导率,低活化能和宽带隙。拉曼光谱法和高分辨率透射电子显微镜(HRTEM)分析表明,薄膜包含埋在非晶硅基质中的纳米晶体,其晶粒尺寸约为3-5 nm。通过在i / p界面处插入p-nc-Si:H缓冲层,与无缓冲电池相比,太阳能电池的整体性能得到了显着改善。改善与i / p界面缺陷状态密度的降低有关。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号