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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Wide bandgap p-type window layer prepared by trimethylboron doping at high temperature for a-Si:H superstrate solar cell
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Wide bandgap p-type window layer prepared by trimethylboron doping at high temperature for a-Si:H superstrate solar cell

机译：三甲基硼高温掺杂制备的a-Si：H表面超薄太阳能电池宽带隙p型窗口层

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摘要

Wide bandgap p-type window layer is necessary for silicon thin film solar cell to obtain excellent performance, such as high open-circuit voltage (V _(OC)), and large short-circuit current density (J _(SC)). Instead of the usually used material, SiC _x:H or SiO x:H fabricated by incorporating C or O into the Si matrix, and nc-Si:H deposited at a very low temperature, wide bandgap p-type window layer was realized here by doping with trimethylboron (TMB) at a relatively high temperature via plasma enhanced chemical vapor deposition (PECVD). Excellent performance with V _(OC) larger than 900 mV was achieved for p-i-n superstrate solar cell on SnO _2:F coated glass while the p-type window layer was deposited at 200 °C to 250 °C. By investigating the influence of the deposition temperature on the p-layer bandgap and microstructure further, it was found that the compromise between wide bandgap and good quality of the p-layer determined the solar cell performance.
机译：宽带隙p型窗口层是硅薄膜太阳能电池获得高开路电压（V _（OC））和大短路电流密度（J _（SC））等优异性能所必需的。代替通常使用的材料，这里实现了通过将C或O掺入Si基体中而制成的SiC _x：H或SiO x：H，并在非常低的温度下沉积了宽带隙p型窗口层的nc-Si：H通过在较高温度下通过等离子体增强化学气相沉积（PECVD）掺杂三甲基硼（TMB）来实现。当在200°C至250°C沉积p型窗口层时，在SnO _2：F涂层玻璃上的p-i-n上层太阳能电池的V _（OC）大于900 mV，可获得出色的性能。通过进一步研究沉积温度对p层带隙和微结构的影响，发现宽带隙与p层的良好质量之间的折衷决定了太阳能电池的性能。

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