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首页> 外文学位 >Development of window layer for high efficiency high bandgap cadmium selenide solar cell for 4-terminal tandem solar cell applications .
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Development of window layer for high efficiency high bandgap cadmium selenide solar cell for 4-terminal tandem solar cell applications .

机译：面向4端子串联太阳能电池的高效高带隙硒化镉太阳能电池窗口层的开发。

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摘要

Tandem solar cells fabricated from thin films provide promise of improved efficiency while keeping the processing costs low. CdSe as top cell are investigated in this work. CIGS has been a standardized process with lab efficiencies reaching 18% [53]. This dissertation focuses on the development of conductive window layer for the development of a high performance, high bandgap solar cell. ZnSe, Cu2-xSe, and ZnSexTe1-x are investigated as viable window layers of the top cell.; ZnSe in undoped form forms a good junction with CdSe films, but the Voc from these devices could never exceed the 360mV mark, while the current densities approached 17.5mA/cm2 [61].To improve Voc's, the high contact energy at the ZnSe/Cu interface has to be overcome by replacing Cu with a metal having higher work function or doping the window layer to form a tunneling contact with Copper.; Deposition of ZnSe from binary sources in presence of nitrogen plasma resulted in films with proper stoichiometry. However, doping could not be accomplished. ZnTe is easily dopable, and was the next alternative. ZnTe doping in presence of Nitrogen plasma resulted in Zn rich films. Hence doping of the ternary compound ZnSexTe1-x was considered. This work focuses on studying the effects of compositional variation on the conductivity of the ZnSexTe1-x films. ZnSexTe1-x films were doped using Nitrogen. Films were deposited by co-evaporation from ZnTe, ZnSe and Se sources. Te/Se ratio was varied by varying the ZnTe thickness and Se Thickness. Films with Zn/Group VI ratio close to 1 were measured for conductivity using IV measurements. Highest conductivity of 2* 10 -8 O-cm was obtained at ZnSe, ZnTe, and Se thicknesses of 2000A, 1500A, and 500A respectively. The actual carrier concentration could be concealed by the current limiting Cu contacts. All films with Zn/Group VI ratio close to 1 showed slight conductivity in the 10-10 O-cm range. Layered ZnSexTe1-x Films doped with Nitrogen had targeted Zn/Group VI ratio of 1, but with a higher Te content. The films were also slightly conductive, in the 10-10 O-cm range. The mechanism limiting the doping in all the films seems to be the same.
机译：由薄膜制成的串联太阳能电池有望提高效率，同时保持较低的加工成本。在这项工作中研究了CdSe作为顶部电池。 CIGS已成为标准化流程，实验室效率达到18％[53]。本论文的重点是开发导电窗层，以开发高性能，高带隙的太阳能电池。 ZnSe，Cu2-xSe和ZnSexTe1-x被研究为顶部电池的可行窗口层。未掺杂形式的ZnSe与CdSe薄膜形成良好的结，但这些器件的Voc永远不会超过360mV标志，而电流密度接近17.5mA / cm2 [61]。为提高Voc，ZnSe /的高接触能必须通过用具有较高功函数的金属代替Cu或掺杂窗口层以形成与铜的隧道接触来克服Cu界面。在氮等离子体的存在下，从二元源沉积ZnSe会产生具有适当化学计量的薄膜。但是，掺杂不能完成。 ZnTe易于掺杂，是下一个替代方案。在氮等离子体存在下掺杂ZnTe会产生富锌薄膜。因此，考虑了三元化合物ZnSexTe1-x的掺杂。这项工作专注于研究成分变化对ZnSexTe1-x薄膜电导率的影响。 ZnSexTe1-x薄膜使用氮气掺杂。通过共蒸发从ZnTe，ZnSe和Se来源沉积薄膜。通过改变ZnTe厚度和Se厚度来改变Te / Se比。使用IV测量来测量Zn / VI组比接近1的薄膜的电导率。 ZnSe，ZnTe和Se的厚度分别为2000A，1500A和500A时，可获得最高2 * 10 -8 O-cm的电导率。限流铜触点可以掩盖实际的载流子浓度。 Zn / VI组比率接近1的所有薄膜在10-10 O-cm范围内均显示出轻微的导电性。掺杂氮的层状ZnSexTe1-x薄膜的目标Zn / VI组比率为1，但Te含量较高。薄膜的导电性也很小，在10-10 O-cm的范围内。限制所有薄膜中掺杂的机制似乎是相同的。

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  • 作者

    Vakkalanka, Sridevi A.;

  • 作者单位

    University of South Florida.;

  • 授予单位 University of South Florida.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 123 p.
  • 总页数 123
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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