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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Wide bandgap p-type nanocrystalline silicon oxide as window layer for high performance thin-film silicon multi-junction solar cells
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Wide bandgap p-type nanocrystalline silicon oxide as window layer for high performance thin-film silicon multi-junction solar cells

机译：宽带隙p型纳米晶体氧化硅作为高性能薄膜硅多结太阳能电池的窗口层

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摘要

High efficiency thin-film silicon multi-junction solar cells require both high open-circuit voltage (Vac) and high blue spectral response in the top amorphous silicon (a-Si:H) cell. Here we investigated the mixed-phase p-type nanocrystalline silicon oxide (p-SiOx) films and used this material as window layer in high V-oc a-Si:H p-i-n solar cells. The introduction of oxygen suppresses the nucleation of Si nanocrystallites. Therefore, p-SiOx film with low oxygen content should be used for the contact layer, to guarantee growth of highly conductive Si nanocrystallites in the initial few nanometers. With p-SiOx as p-layer, the optimal p-SiOx film has high oxygen content and thus high bandgap, resulting higher V-oc and better spectral response than the standard p-type amorphous silicon carbide alloys (p-SiC) based window layer. Although the optimal p-SiOx film has very low planar conductivity (in the order of 10(-12) S/cm), the filament-like Si nanocrystallites which grow perpendicular to the substrate enable the adequate transverse conduction for the solar cells. Consequently, a-Si:H solar cells with V-oc > 1 V and FF > 70% have been obtained. Finally, the p-SiOx window layers were successfully applied to thin-film silicon multi-junction solar cells. A high initial efficiency of 14.4% has been achieved in a-Si:Hc-Si:H tandem solar cells. (C) 2014 Elsevier B.V. All rights reserved.
机译：高效薄膜硅多结太阳能电池在顶部非晶硅（a-Si：H）电池中需要高开路电压（Vac）和高蓝色光谱响应。在这里，我们研究了混合相p型纳米晶体氧化硅（p-SiOx）膜，并将该材料用作高V-oc a-Si：H p-i-n太阳能电池中的窗口层。氧的引入抑制了Si纳米晶体的成核。因此，应将低氧含量的p-SiOx膜用作接触层，以确保在最初的几纳米中生长出高导电性的Si纳米微晶。以p-SiOx为p层，最佳的p-SiOx膜具有高的氧含量，因此带隙高，与标准的基于p型非晶碳化硅合金（p-SiC）的窗口相比，具有更高的V-oc和更好的光谱响应层。尽管最佳的p-SiOx薄膜具有极低的平面电导率（约为10（-12）S / cm），但垂直于基板生长的丝状Si纳米微晶能够为太阳能电池提供足够的横向传导。结果，获得了V-oc＞ 1V且FF＞ 70％的a-Si：H太阳能电池。最后，p-SiOx窗口层已成功应用于薄膜硅多结太阳能电池。 a-Si：H / nc-Si：H串联太阳能电池的初始效率高达14.4％。 （C）2014 Elsevier B.V.保留所有权利。

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