...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Dynamics of evaporation from CuGaSe_2 targets in pulsed electron deposition technique
【24h】

Dynamics of evaporation from CuGaSe_2 targets in pulsed electron deposition technique

机译：脉冲电子沉积技术中CuGaSe_2靶的蒸发动力学

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The evaporation mechanisms from a solid target in pulsed electron deposition (PED) technique have been investigated by analysing the chemical composition and the thickness distribution of CuGaSe_2 (CGS) films grown at different discharge voltages on glass substrates. The behaviour of the plasma plume generated from the target can be described by a linear combination of two coexisting processes: incongruent thermal evaporation and congruent ablation, which exhibit different weights depending on the PED voltage. The first component arises from the thermodynamic liquid-to-vapour transition involving the very first layers of the target surface, while the second one is due to the subsurface target penetration of the pulsed e-beam. The chemical composition of the thermally evaporated cloud, according to the CuGaSe _2 phase diagram, exhibits an incongruent Cu depletion during the solid-to-gas phase transition with respect to the target, thus forming the ordered vacancy compound CuGa_3Se_5, while the sublimation of ablated species is perfectly stoichiometric. The thermally evaporated plasma follows a typical surface source spatial distribution, while the expansion of the ablation products exhibit a forward-peaked angular behaviour proportional to cos pθ (4 < p < 7). The incongruent component becomes negligible by enhancing the discharge voltage, where the e-beam is able to more deeply penetrate the target, and the electron power density exceeds the threshold ablation value of 1 × 10~8 W cm~(-2). The proposed mechanism for PED process is compared to other models describing the plume generation in pulsed high-energy-induced growth technique. This study represents a remarkable result to better understand and control the PED process.
机译：通过分析在玻璃基板上不同放电电压下生长的CuGaSe_2（CGS）薄膜的化学组成和厚度分布，研究了脉冲电子沉积（PED）技术中固体靶材的蒸发机理。从目标产生的等离子羽流的行为可以通过两种共存过程的线性组合来描述：不一致的热蒸发和一致的消融，这取决于PED电压而表现出不同的权重。第一个成分来自涉及目标表面第一层的热力学从液体到蒸气的跃迁，而第二个成分则是由于脉冲电子束的地下目标穿透。根据CuGaSe _2相图，热汽化云的化学成分在固-气相变过程中相对于靶材表现出不相称的Cu耗尽，从而形成有序的空位化合物CuGa_3Se_5，而升华的则是物种是完全化学计量的。热蒸发的等离子体遵循典型的表面源空间分布，而消融产物的膨胀表现出与cospθ成正比的前向角行为（4 <7）。通过提高放电电压，可以使微不足道的成分忽略不计，在该电压下，电子束能够更深地穿透目标，并且电子功率密度超过阈值消融值1×10〜8 W cm〜（-2）。将PED过程的拟议机制与描述脉冲高能诱导生长技术中羽流生成的其他模型进行比较。这项研究代表了一个很好的结果，可以更好地理解和控制PED过程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号