...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Equibiaxial strain: Tunable electronic structure and optical properties of bulk and monolayer MoSe_2
【24h】

Equibiaxial strain: Tunable electronic structure and optical properties of bulk and monolayer MoSe_2

机译：等双轴应变：块状和单层MoSe_2的可调电子结构和光学性质

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Using ab initio calculations based on density functional theory, we have studied the equibiaxial strain effect on the electronic and optical properties of bulk and monolayer MoSe_2. Very low value of the elastic constants of monolayer MoSe_2 compared to bulk MoSe_2 suggests that the tailoring of the electronic structure and optical properties of monolayer MoSe_2 may easily be achieved by strain. We find that the band gap (E_g) of MoSe_2 undergoes a transition from indirect to direct upon reducing the thickness of the monolayer which is associated with an enhancement of E_g and is further tunable by strain engineering. We noticed that the splitting of the bands that generally determines the luminescence property of MoSe_2 can be modified by strain. Strain effect on bond ionicity, dielectric property (real and imaginary component) of bulk and monolayer MoSe_2 has also been briefly discussed. We noticed that the plasma oscillation, found in bulk MoSe_2, is absent in MoSe_2 monolayer.
机译：使用基于密度泛函理论的从头计算，我们研究了等双轴应变对本体和单层MoSe_2的电子和光学性质的影响。与本体MoSe_2相比，单层MoSe_2的弹性常数非常低，这表明通过应变可以轻松实现单层MoSe_2的电子结构和光学性质的定制。我们发现MoSe_2的带隙（E_g）在减小单层厚度时经历了从间接到直接的过渡，这与E_g的增强相关，并且可以通过应变工程进行进一步调整。我们注意到，通常决定MoSe_2发光特性的能带分裂可以通过应变来改变。还简要讨论了应变对本体和单层MoSe_2的键离子性，介电性能（实部和虚部）的影响。我们注意到在MoSe_2单层中不存在在整体MoSe_2中发现的等离子体振荡。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号