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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT
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Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

机译：PECVD沉积的SiNx钝化层厚度对In0.18Al0.82N / GaN / Si HEMT的影响

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摘要

The influence of plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiNx) passivation film thickness on In0.18Al0.82N/GaN/Si heterostructures and HEMTs has been investigated. The formation of Si3N4 was confirmed by x-ray photoelectron spectroscopy (XPS) measurements. X-ray reflectivity (XRR) measurements reveal that both the density and roughness of the SiNx film increase with increasing film thickness. With an increase in SiNx film thickness, a significant increase in two-dimensional electron gas (2DEG) density, drain current, extrinsic transconductance and negative threshold voltage shift of the In0.18Al0.82/GaN/Si HEMTs are observed. An optimal thickness of SiNx is similar to 100 nm and it yields a substantial increase in 2DEG density (similar to 30%) with a minimum sheet resistance for In0.18Al0.82N/GaN/Si heterostructures. Furthermore, we correlate the observed SiNx film thickness-dependent electrical characteristics of In0.18Al0.82/GaN/Si HEMTs with the density of the SiNx film.
机译：研究了等离子体增强化学气相沉积（PECVD）氮化硅（SiNx）钝化膜厚度对In0.18Al0.82N / GaN / Si异质结构和HEMT的影响。通过X射线光电子能谱（XPS）测量确认了Si3N4的形成。 X射线反射率（XRR）测量表明，SiNx膜的密度和粗糙度都随膜厚度的增加而增加。随着SiNx膜厚度的增加，观察到In0.18Al0.82 / GaN / Si HEMT的二维电子气（2DEG）密度，漏极电流，非本征跨导和负阈值电压偏移显着增加。 SiNx的最佳厚度接近100 nm，并且在In0.18Al0.82N / GaN / Si异质结构的最小薄层电阻下，可大幅提高2DEG密度（约30％）。此外，我们将In0.18Al0.82 / GaN / Si HEMTs的SiNx膜厚度相关的电学特性与SiNx膜的密度相关联。

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