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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111)
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Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111)

机译：Ir（111）从大面积单晶外延石墨烯的电化学转移

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摘要

High-quality growth of graphene and subsequent reliable transfer to insulating substrates are needed for various technological applications, such as flexible screens and high speed electronics. In this paper, we present a new electrochemical method for the transfer of large-area, high-quality single crystalline graphene from Ir(1 1 1) to Si/SiO2 under ambient conditions. The method is based on intercalation of tetraoctylammonium ions between the graphene layer and the Ir surface. This simple technique allows transfer of graphene single crystals having the same size as the substrate they are grown on (diameter approximate to 7 mm). In addition, the substrate can be reused for further growth cycles. A detailed Raman map analysis of the transferred graphene reveals straight lines, in which the Raman peaks characteristic for graphene are shifted. These lines originate from scratches in the Ir(1 1 1) crystal introduced by the polishing procedure. Furthermore, areas with numerous wrinkles exist inbetween these lines, forming a network across the entire graphene crystal. Hence, the initial characteristics and imprints left on the sheet of graphene in terms of strain and wrinkles from the growth process remain after transfer.
机译：对于各种技术应用，例如柔性屏幕和高速电子设备，都需要高质量地生长石墨烯并随后可靠地将其转移到绝缘基板上。在本文中，我们提出了一种新的电化学方法，用于在环境条件下将大面积，高质量的单晶石墨烯从Ir（1 1 1）转移到Si / SiO2。该方法基于四辛基铵离子在石墨烯层和Ir表面之间的插入。这种简单的技术可以转移具有与其生长衬底相同尺寸的石墨烯单晶（直径约7毫米）。另外，可以将衬底再用于进一步的生长周期。对转移的石墨烯的详细拉曼图分析显示了直线，其中石墨烯的拉曼峰特征发生了位移。这些线条源自抛光程序引入的Ir（1 1 1）晶体中的划痕。此外，在这些线之间存在具有许多皱纹的区域，从而在整个石墨烯晶体上形成网络。因此，就转移后而言，在石墨烯片材上留下的初始特征和在生长过程中产生的应变和皱纹方面留下的印记。

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