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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Spectroscopic characterization of the plasma generated during the deposition of AlxGa1-xN films by pulsed laser co-ablation of Al and GaAs targets in electron cyclotron resonance nitrogen plasma
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Spectroscopic characterization of the plasma generated during the deposition of AlxGa1-xN films by pulsed laser co-ablation of Al and GaAs targets in electron cyclotron resonance nitrogen plasma

机译：电子回旋共振氮等离子体中Al和GaAs靶的脉冲激光共烧蚀在AlxGa1-xN膜沉积过程中产生的等离子体的光谱表征

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摘要

A nitrogen-aluminum-gallium-arsenic plasma is formed by pulsed laser co-ablation of an Al target and a GaAs target in electron cyclotron resonance discharge-generated nitrogen plasma for AlxGa1-xN film deposition. The formed plasma was characterized by time-integrated and time-resolved optical emission spectroscopy measurements and the process of AlxGa1-xN deposition was discussed. The plasma contains excited species originally present in the working N-2 gas and energetic species ablated from the targets, and its emission is abundant in the emission bands of diatomic nitrogen molecules and molecular ions and the emission lines of monoatomic aluminum, gallium, and arsenic atoms and atomic ions. The temporal and spatial features of the plasma emission reveal that the nitrogen species in the electron cyclotron resonance nitrogen plasma experience additional excitations due to the expanding ablation plumes, and the ablated species are excited frequently when traveling with the expanding plumes in the nitrogen plasma, making the formed plasma very reactive, which is very important in the process of AlxGa1-xN film deposition. The deposited film was evaluated for composition analysis by energy-dispersive x-ray spectroscopy and structure characterization by x-ray diffraction. The AlxGa1-xN film is slightly nitrogen rich with an aluminum content x of about 0.6 and featured with hexagonal wurtzite crystal structure with preferred c-axis orientation.
机译：通过在电子回旋共振放电产生的用于沉积AlxGa1-xN的氮等离子体中对Al靶和GaAs靶进行脉冲激光共烧蚀，形成氮-铝-镓-砷等离子体。通过时间积分和时间分辨光发射光谱测量对形成的等离子体进行了表征，并讨论了AlxGa1-xN沉积的过程。等离子体中包含最初存在于工作中的N-2气体中的激发态和从靶中消散的高能态，其发射在双原子氮分子和分子离子的发射带以及单原子铝，镓和砷的发射谱线中丰富。原子和原子离子。等离子体发射的时间和空间特征表明，由于回旋烟羽膨胀，电子回旋共振氮等离子体中的氮物质受到额外的激发，并且当与氮等离子体中的膨胀羽一起行进时，被烧蚀的物质经常被激发，从而形成的等离子体反应性很强，这在AlxGa1-xN薄膜沉积过程中非常重要。通过能量色散X射线光谱法评价沉积膜的成分分析，并通过X射线衍射对结构膜进行表征。 AlxGa1-xN膜略微富氮，铝含量x约为0.6，并且具有六方纤锌矿晶体结构，具有优选的c轴取向。

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